Combined MOSFET and Schottky Diode Increases Current Handling and Cuts Losses

Combining packaging advances that boost current-handling capabilitywith lowon-resistance and low reverse-recovery charge, theVishay SiE726DF SkyFET™ improves the efficiency of high-current power-control circuits.

The SiE726DF combines a 30V N-channel power MOSFET with an integrated Schottky diode. Its encapsulated PolarPAK® package has thermal resistance of 1°C/W and has an exposed top for effective cooling to both surfaces, both sides. These thermal enhancements enable 50% higher current-handling capability compared to a standard SO-8 device, within the same footprint. Maximum rated current is package-limited to 60A, and with low on-resistance of 2.4mΩ the SiE726DF minimises losses when passing high currents.

The characteristics of the Schottky diode and MOSFET parasitic diode are also optimised for higher overall efficiency, with overall reverse-recovery charge of 30nC and source-drain voltage of 0.37V helping to reduce power losses compared to a standard MOSFET. Moreover, these savings increase with higher switching frequency. Implementing the external Schottky diode inside the package allows designers to create smaller, more compact circuit designs while reducing costs.

 

FEATURES Encapsulated, non-exposed die Shoot-through resistant design Heatsink-free operation

APPLICATIONS High-current synchronous rectification Voltage-Regulator Modules (VRM) POL converters Systems with forced-air cooling Graphics cards

 

 

Vishay / SiE726DF