Latest-Generation 60V Power Transistors Deliver Low-Loss, Rugged Performance in Small Outlines

Offering low on-resistance in small package sizes, and with 60V breakdown voltage delivering an extra safety margin in mid-voltage applications, ON Semiconductor NTx54xxN N-channel power MOSFETs have maximum current ratings from 20A to 120A.

These power transistors minimise power dissipation in conduction and switching modes, with a combination of low on-resistance values, from 5mΩ to 37.5mΩ, as well as low gate charge and low switching energy. While promoting higher efficiency in a wide variety of motion-control and power conversion applications, these low-loss advantages are achieved within a small active silicon area and thereby offer designers the choice of a surface-mount D2PAK package, or the popular 3-pin TO-220 package. The NTD5413N and NTD5414N, rated for 45A and 20A applications, are offered in the DPAK surface-mount package.

As well as offering low-loss performance, these transistors are ideal for use in applications where diode speed and commutating safe operating areas are crucial and additional safety margin delivers valuable extra protection against unexpected voltage transients.

 

FEATURES Broad choice of current ratings Avalanche energy specified Low leakage current 4.0V gate threshold voltage

APPLICATIONS DC motor drives LED drivers Power supplies DC/DC converters PWM controls Bridge circuits

 

 

 

ON Semiconductor / NTx54xxN MOSFETs